Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

ABSTRACT

Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

This is a division of patent application Ser. No. 09/953,539 filing dateSep. 17, 2001, U.S. Pat. No. 6,888,703 Multilayered StructuresComprising Magnetic Nano-Oxide Layers For Current Perpendicular To PlaneGMR Heads, assigned to the same assignee as the present invention, whichis herein incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to the fabrication of giantmagnetoresistive (GMR) magnetic field sensors of a“current-perpendicular-to-the-plane” (CPP) configuration and moreparticularly to such sensors having novel multilayer structures thatincorporate magnetic nano-oxide layers.

2. Description of the Related Art

Magnetic read sensors that utilize the giant magnetoresistive (GMR)effect for their operation are generally of the “current-in-the-plane”(CIP) configuration, wherein current is fed into the structure by leadsthat are laterally disposed to either side of the active sensor regionand moves through the structure essentially within the planes of itsmagnetic layers. Since the operation of GMR sensors depends onresistance variations of the active magnetic layers caused by changes inthe relative directions of their magnetic moments, it is important thata substantial portion of the current pass through those layers so thattheir resistance variations can have a maximal effect. Unfortunately,GMR sensor configurations typically involve layer stacks comprisinglayers that are electrically conductive but that play no role inproviding resistance variations. As a result, portions of the currentcan be shunted through regions that are ineffective in terms of sensoroperation and, thereby, the overall sensitivity of the sensor isadversely affected. The CPP sensor configuration avoids this currentshunting problem by disposing its conducting leads vertically above andbelow the active sensor stack, so that all of the current passesperpendicularly through all of the layers as it goes from the lower tothe upper lead. The configuration of the conducting leads is such thatthe current goes through the leads, front to back, in oppositedirections in each lead but perpendicularly to the ABS of the sensorelement, then passes vertically through all layers of the sensor andperpendicularly through their interfacial planes. Dykes et al. (U.S.Pat. No. 5,668,688) disclose a CPP sensor that is generally structuredin a spin-valve (SV) configuration and achieves an enhanced ΔR/R ascompared with a CIP sensor of similar configuration. The CPP sensor ofDykes essentially consists of an SV stack comprising a pinning layer, aferromagnetic pinned layer, and a ferromagnetic free layer, with thethree being sandwiched between conducting leads.

Barr et al. (U.S. Pat. No. 6,198,609) addresses certain current flowproblems that persist even in the CPP design. In particular, even thougha substantial portion of the current goes through each layer of thesensor element because of the over and under disposition of its leads, aportion of the current can still be shunted along edge paths that definethe lateral width of the element. The method taught by Barr et al. formsa CPP sensor element having apertures to guide the current so as tosubstantially reduce these disadvantageous edge effects.

The magnetic tunnel junction (MTJ) is a device that is usable as amagnetic field sensor or as a memory cell in a magnetic random accessmemory (MRAM) array. The operating principle of the MTJ is quite similarto that of the CPP sensor formed in a spin valve configuration. In theMTJ device, two ferromagnetic layers are separated by a contiguousinsulating tunnel barrier layer. One ferromagnetic layer has itsmagnetic moment fixed spatially by an antiferromagnetic layer that isinterfacially coupled to it. The other ferromagnetic layer, the “free”layer, has its magnetization vector free to move. The relative positionsof the two magnetization vectors then controls the amount of tunnelingcurrent that can pass through the insulating tunnel barrier layer. In anMRAM array, such an MTJ structure would be “written” by rotating themagnetization direction of its free layer to some given positionrelative to the magnetically fixed layer. Gallagher et al. (U.S. Pat.No. 5,650,958) provide such a MTJ structure formed with Ni₈₁Fe₁₉ layersas the pinned and free ferromagnetic layers, a Mn₅₀Fe₅₀ layer as theantiferromagnetic layer and Al₂O₃ layer as the insulating tunnel layer.Dill et al. (U.S. Pat. No. 5,898,548) teach a method of forming amagnetic read head using a similar MTJ element as a read sensor.Nishimura (U.S. Pat. No. 6,111,784) teaches a method of forming an MTJstructure for use as a magnetic thin film memory, wherein the MTJstructure comprises a first magnetic layer, a non-magnetic, partiallyinsulating tunneling layer and a second magnetic layer, the two magneticlayers having different coercivities. Finally, Lubitz, et al. (U.S. Pat.No. 6,171,693) teaches a method of forming a GMR stack having at leasttwo ferromagnetic layers separated from each other by a nonferromagneticlayer, wherein a layer of phase-breaking material such as Ta or aTa-alloy between the ferromagnetic layer and the nonferromagnetic layerprevents the undesirable growth of large-grained structures in theferromagnetic layers.

One problem with CPP sensor configurations has already been alluded toabove, the undesirable shunting of current along the edges of the activesensor region. Another more general problem of even greater importanceis the difficulty of fabricating a CPP sensor element having aresistance within reasonable bounds for practical applications. In thisregard, CPP structures formed of metallic multilayers, such as thosecited in the patents above, have too low a resistance, whereas MTJ typeconfigurations, having insulating tunneling layers, have too high aresistance. Taking as a figure of merit RA, the product ofperpendicular-to-plane sensor resistance, R, and cross-sectional area,A, it is found that metallic multilayers typically have RA between 1mΩ.μm² (1 milli-ohm micron squared) and 5 Ω.μm², while MTJ typeconfigurations typically have RA=10 Ω.μm² or more. The RA value of themetallic multilayers can vary to some degree with the materials used forthe layers, the layer thicknesses and the number of repeated layers.Nevertheless, for reading high-density magnetic recordings (above 200Gbit/in²), the thickness of the sensor is limited by the need to resolvemagnetic flux transitions, so it is not possible to increase RAmeaningfully by increasing thickness. For an area, A, within usablevalue of about 0.01 μm², the CPP resistance is about 0.1 Ω, which is toolow for practical purposes. MTJ's have also been considered as possiblesensor structures, since large MR amplitudes of up to 40% at roomtemperature have been reported. In these junctions, as in the magneticmultilayers, the perpendicular resistance, R, varies inversely with thearea of the junction, A. Evaluation of the signal-to-noise ratio in MTJread heads has shown that such heads can compete with CIP sensor headsonly if the AR product can be reduced to below 5 Ω.μm². Such lowresistance is difficult to attain in MTJ structures. Since theresistance of such junctions varies exponentially with junctionthickness, an Alumina tunnel layer (such as that in Gallagher et al.,above) would have to have a thickness of less than 5 angstroms toachieve the requisite RA value. Such a thin layer would introduce theproblems of pinholes or general reliability over typical usage periods.

Therefore a need arises for a structure having a value of RA that isintermediate between that of metallic multilayered CPP configurationsand MTJ type configurations.

SUMMARY OF THE INVENTION

Accordingly, it is a first object of this invention is to provide anovel current-perpendicular-to-plane (CPP) magnetoresistive (MR)read-sensor stack structure having a product, RA, of perpendicularresistance, R, and cross-sectional area, A, which falls between valuesof RA provided by metallic multilayer CPP structures and magnetic tunneljunction (MTJ) structures used as read-sensors.

It is, therefore, a second object of this invention to provide a novelCPP MR read-sensor stack structure having a resistance of the order of10 to 20 Ω for a sensor of area of 0.01 μm² implying a product, RA, of0.1 Ω.μm².

It is a further object of this invention to provide such a novel CPP MRread-sensor stack structure that has enhanced magnetoresistiveproperties.

It is a further object of this invention to provide such novel CPP MRread-sensor stacks in various stack configurations, including suchconfigurations as multiple free layer structures, spin-valve structuresand synthetic antiferromagnetic structures.

It is yet a further object of the present invention to provide suchnovel CPP MR read-sensor stacks in the form of unit cells which can becombined as sequences of identical units or of different units.

It is still a further object of the present invention to provide suchnovel CPP MR read sensor stacks that can be incorporated into magneticread heads that embody the advantageous properties of said stacks.

It is yet a further object of the present invention to provide methodsfor forming each of the above read-sensor stacks.

In accord with the objects of this invention there are provided methodsfor forming multi-layered magnetic stack structures and the structuresso formed, in which ferromagnetic metallic layers are alternated withnon-magnetic metallic spacer layers and wherein magnetic nano-oxide (MO}layers such as Fe₃O₄ or CrO₂, CoFeNi based spinel structures,ferrimagnetic garnets, manganites or other ferromagnetic perovskites, orferromagnetic nitrides, are inserted at the interfaces of theferromagnetic and non-magnetic layers or placed within the bulk of themetallic ferromagnetic layers. Said magnetic nano-oxide layers provideboth an increased resistive path for conduction electrons andresistively differentiate between spin up and spin down electrons,thereby enhancing the magnetoresistive properties of the stack. Furtherin accord with the objects of this invention, the only oxide or nitridelayers present in the stack must be magnetic, eg., ferrimagnetic orferromagnetic. If other non-magnetic oxide layers are present, suchlayers must exhibit material discontinuities, eg., pinholes or otheropenings through which electrical charges can easily flow. Further it isthe role of the non-magnetic metallic spacer layers to permit sufficientseparation of the magnetic layers so that relative motion of theirmagnetic moments is allowed. Yet further in accord with the objects ofthis invention, the thickness of the MO layers is preferentially withinthe range between 0.2 nanometers (nm) and 6 nm and if two MO layers ofthe same material are used, their thicknesses are preferably chosen tobe equal. Further yet in accord with the objects of this invention, theMO layers may or may not be exchange coupled to the ferromagnetic metallayers. If they are so coupled, they can be located within the bulk ofthe ferromagnetic layer or, preferably, located at the interface of thenon-magnetic spacer layer to reduce the separation between successive MOlayers as much as possible. Still further in accord with the objects ofthis invention the multilayered stack structures can be configuredaccording to different schemes and modalities whereby, for example, aplurality of ferromagnetic layers may be free layers, a plurality offerromagnetic layers can be pinned by exchange coupling toantiferromagnetic layers, a plurality of ferromagnetic layers can beseparated by MO layers and antiferromagnetically coupled to each otherand to antiferromagnetic layers and a plurality of MO layers canthemselves serve as pinned layers. Yet further in accord with theobjects of this invention, identical stack formations may be replicatedand connected in series or different stack configurations can be formedin series to produce new variations thereby. Finally, in accord with theobjects of this invention, said stack configurations can be incorporatedinto read-heads and into read-write head merged combinations byproviding them with appropriate conducting lead structures and magneticbias layers.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects, features and advantages of the present invention areunderstood within the context of the Description of the PreferredEmbodiments, as set forth below. The Description of the PreferredEmbodiments is understood within the context of the accompanying figure,wherein:

FIGS. 1 a–d provides a schematic cross-sectional representation of thestack configuration of a first preferred embodiment along with asequence depicting the process steps by which it is formed.

FIGS. 2 a–d provides a schematic cross-sectional representation of thestack configuration of a second preferred embodiment along with asequence depicting the process steps by which it is formed.

FIGS. 3 a–d provides a schematic cross-sectional representation of thestack configuration of a third preferred embodiment along with asequence depicting the process steps by which it is formed.

FIGS. 4 a–d provides a schematic cross-sectional representation of thestack configuration of a fourth preferred embodiment along with asequence depicting the process steps by which it is formed.

FIGS. 5 a–c provides a schematic cross-sectional representation of thestack configuration of a fifth preferred embodiment along with asequence depicting the process steps by which it is formed.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides a variety of CPP MR layered sensor stackconfigurations and methods for fabricating them, wherein saidconfigurations exhibit a large giant magnetoresistive (GMR) amplitude(ΔR/R) and have a product of perpendicular resistance, R andcross-sectional area, A, that falls between that of metallic layered CPPsensor stacks and MTJ devices. The stack formations comprise alternatinglayers of metallic ferromagnetic materials, non-magnetic metallic spacerlayers, and a variety of thin, nano-layers of magnetic oxides,manganites, CoFeNi based spinel structures, ferrimagnetic garnets,manganites, or other ferromagnetic perovskites and ferromagneticnitrides. For simplicity of the following descriptions, thesenano-layers will be denoted collectively and with equal meaning as“magnetic nano-oxide layers” or, for brevity, (MO) layers.

Referring first to FIG. 1 a, there is seen a schematic cross-sectionaldiagram of the first embodiment of a sensor stack formed in accord withthe methods and objects of the present invention and wherein magneticnano-oxide layers (4) and (40) are inserted between ferromagnetic layers(2), (20), (22) and (220) to form two magnetic tri-layers (8) and (80).Non-magnetic spacer layers (6), (60) and (600) separate the magneticlayers from each other and from upper and lower substrates (not shown).

Referring next to FIG. 1 b, there is shown a schematic cross-sectionaldiagram of an initial step in the formation of the sensor stack of FIG.1 a. There is first formed on an appropriate substrate (not shown) afirst metallic, non-magnetic spacer layer (6). All metallic,non-magnetic spacer layers formed in this embodiment and in theembodiments to be described in FIGS. 2, 3, 4, and 5, can be layers ofmaterial such as Cu, Au or Ag and can be formed to a thickness ofbetween 0.5 nm and 10 nm. Upon the spacer layer (6), there is thenformed a first magnetic tri-layer (8), comprising two ferromagneticlayers (2) and (20), separated by a magnetic nano-oxide layer (4). Inthis embodiment and in the embodiments to follow, the ferromagneticlayers can be layers of ferromagnetic transition metal alloys,preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀, formed to a thickness between 0.5 nmand 5.0 nm and the magnetic nano-oxide layers are layers of materialsuch as Fe₃O₄ or CrO₂, CoFeNi based spinel structures, ferrimagneticgarnets, manganites or other ferromagnetic perovskites, or ferromagneticnitrides and are formed to a thickness of between 0.4 nm and 6.0 nm.

Other possible nano-oxide materials that meet the objects and methods ofthis invention are the nano-oxide layers formed by surface oxidation ofNiFe or CoFe. The thickness of the magnetic nano-oxide layers must besufficiently thin so as to avoid producing the high resistancesencountered in magnetic tunnel junctions, yet thick enough to avoidpinholes. It is the advantageous role of these magnetic nano-oxidelayers that they both increase the perpendicular resistance of the stackformation as is desired and, at the same time, differentiate resistivelybetween spin up and spin down (relative to magnetizations) electrons,thereby improving the magnetoresistive effects of the layeredstructures. In this particular embodiment the magnetic nano-oxide layers(4) and (40) are strongly coupled to their two surrounding ferromagneticlayers (2) and (20) and (22) and (220), so that the overall magneticbehavior of the stack is that of a soft (low coercivity) magneticmaterial. In this embodiment the magnetic moments of bothferromagnet/nano-oxide/ferromagnet tri-layers (8) and (80) are free torotate as a function of an applied external field, such as that of amagnetic storage medium. When the stack of this embodiment isincorporated within a complete read head structure, the two tri-layerswould be coupled so that their magnetic moments were in an antiparallelalignment. In such a design, the alignment is stabilized bymagnetostatic fields at the edges of the stack. If the stack has asquare shape, the magnetic moments will tend to lie along the diagonalsof the square. Typically, a bias field is applied by laterally disposedpermanent (hard) magnetic biasing layers, so that the magnetic momentsare at 90° to each other in their quiescent state. In operation, theexternal fields produced by magnetic storage media will rotate thealignment from the quiescent configuration to either parallel orantiparallel alignments depending upon whether the external field ispositive or negative.

Referring next to FIG. 1 c, there is shown the formation of FIG. 1 b onwhich has been additionally formed a second non-magnetic spacer layer(60), to separate the two magnetic tri-layers in this embodiment fromeach other. Said layer is formed of metallic, non-magnetic materialssuch as Cu, Au or Ag and can be formed to a thickness of between 0.5 nmand 10 nm.

Finally, referring next to FIG. 1 d, there is shown the formation ofFIG. 1 c on which has been additionally formed a second magnetictri-layer (80), comprising the formation of two ferromagnetic layers.(22) and (220), separated by a magnetic nano-oxide layer (40). Saidferromagnetic layers can be layers of ferromagnetic transition metalalloys, preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀, formed to a thickness ofbetween 0.5 nm and 5.0 nm and said magnetic nano-oxide layer is a layerof material such as Fe₃O₄ or CrO₂, CoFeNi based spinel structures,ferrimagnetic garnets, manganites or other ferromagnetic perovskites, orferromagnetic nitrides and are formed to a thickness of between 0.4 nmand 6.0 nm. There is then formed over the tri-layer a spacer layer (600)of a non-magnetic material such as Cu, Au or Ag and can be formed to athickness of between 0.5 nm and 10 nm.

Referring now to FIG. 2 a, there is shown a schematic cross-sectionalrepresentation of a sensor stack formed in accord with a secondembodiment of the present invention. The stack of this embodiment is aCPP stack that differs structurally from that of FIG. 1 a by thepositioning of the its magnetic nano-oxide layers (10) and (100), whichare now at the interfaces of the ferromagnetic layers (9) and (90)(rather than within the body of the ferromagnetic layer) and separatedby a non-magnetic metallic spacer layer (12). The dimensions andmaterial compositions of the layers will be discussed below in thecontext of their formations. It should be noted that the thickness ofeach ferromagnetic layer (9) and (90) is preferably equal to the sum ofthe thicknesses of the two ferromagnetic layers (2) and (20) and (22)and (220), in FIG. 1 a.

The performance characteristics of this stack exceed those of the stackin FIG. 1 a for the following reason. In order to obtain a large GMRamplitude, it is important that the electrons retain their spindirection in passing between the two ferromagnetic layers. The spin flipdiffusion length for electrons in Ni₈₀Fe₂₀ is known to be 5.5 nm,whereas in non-magnetic substances, such as those used in the spacerlayers, the spin flip diffusion length is several tens of nanometers. Inthe structure of FIG. 1 a, therefore, electrons must pass between agreater thickness than that of Ni₈₀Fe₂₀ as they pass between the twotri-layers, whereas in the structure of FIG. 2 a, electrons pass onlythrough the non-magnetic layer (12) as they go from one ferromagneticlayer to the other. Therefore, the probability of a spin flip is greatlyreduced in the structure of FIG. 2 a and the magnetoresistive effect ismore pronounced.

Referring next to FIGS. 2 b–d, there is shown the schematic diagrams ofa succession of steps leading to the formation of the stack of FIG. 2 a.Referring first to FIG. 2 b, there is shown a first non-magnetic layer(7) on which has been formed a first ferromagnetic layer (9). Thenon-magnetic layer is a layer of a non-magnetic material such as Cu, Auor Ag and can be formed to a thickness of between 0.5 nm and 10 nm. Saidferromagnetic layer can be a layer of ferromagnetic transition metalalloy, preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀, formed to a thickness ofbetween 0.5 nm and 5.0 nm.

On the ferromagnetic layer (9), is then formed a first magneticnano-oxide layer (10), wherein said magnetic nano-oxide layer is a layerof material such as Fe₃O₄ or CrO₂, CoFeNi based spinel structures,ferrimagnetic garnets, manganites or other ferromagnetic perovskites, orferromagnetic nitrides and are formed to a thickness of between 0.4 nmand 6.0 nm of a non-magnetic material such as Cu, Au or Ag and can beformed to a thickness of between 0.5 nm and 10 nm.

Referring next to FIG. 2 c, there is shown the fabrication of FIG. 2 b,wherein a second non-magnetic spacer layer (12) has been formed on themagnetic nano-oxide layer (10). The non-magnetic layer is a layer of anon-magnetic material such as Cu, Au or Ag and can be formed to athickness of between 0.5 nm and 10 nm.

Referring finally to FIG. 2 d, there is shown the fabrication of FIG. 2c on which has now been formed a second magnetic nano-oxide layer (100)on the second non-magnetic layer (12). Said magnetic nano-oxide layer isa layer of material such as Fe₃O₄ or CrO₂, CoFeNi based spinelstructures, ferrimagnetic garnets, manganites or other ferromagneticperovskites, or ferromagnetic nitrides and are formed to a thickness ofbetween 0.4 nm and 6.0 nm.

A second ferromagnetic layer (90) is then formed on the second magneticnano-oxide layer and a third non-magnetic spacer layer (70) is formed tocomplete the stack. Said ferromagnetic layer can be a layer offerromagnetic transition metal alloy, preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀,formed to a thickness of between 0.5 nm and 5.0 nm and the spacer layeris formed of a non-magnetic material such as Cu, Au or Ag and can beformed to a thickness of between 0.5 nm and 10 nm.

Referring next to FIG. 3 a, there is shown a third embodiment of thepresent invention, a stack configuration in which one of theferromagnetic layers (16) is exchange biased (pinned) by anantiferromagnetic layer (15). In this case the antiferromagnetic layerwould be a layer of antiferromagnetic material chosen from the groupconsisting of MnPt, NiMn, IrMn, CrMnPt and MnPtPd, and deposited to athickness of between 5 nm and 30 nm. The magnetization of the remainingferromagnetic layer (160) is free to move; thus, layer (160) is aferromagnetically free layer.

In prior art CPP spin-valves structures it has been observed that theuse of an antiferromagnetic pinning layer leads to a decrease of GMRamplitude. This is not the case in the present embodiment, however,since the resistance is dominated by the magnetic nano-oxide layers.Adding the resistance of an antiferromagnetic layer in series is notgoing to affect the resistance appreciably. This structure, therefore,comprises only one soft layer, the free (unpinned) layer, which isunlike either of the structures of FIGS. 1 a and 1 b, which comprise twoferromagnetic layers. If the structure of FIG. 3 a is used in producinga read head sensor, the magnetization of the pinned layer would be setin the direction of the field to be measured, whereas the free layerwould be biased so that it is at a 90° angle to the pinned layer when inthe quiescent state.

Referring next to FIG. 3 b, there is shown a schematic cross-sectionalview of the early stages of the formation of the stack of FIG. 3 a.There is shown a first metallic, non-magnetic layer (11), formed ofmaterial such as Cu, Au or Ag and formed to a thickness of between 0.5nm and 10 nm. On this layer is formed an-antiferromagnetic layer (15), alayer of antiferromagnetic material chosen from the group consisting ofMnPt, NiMn, IrMn, CrMnPt and MnPtPd, and deposited to a thickness ofbetween 5 nm and 30 nm. On the antiferromagnetic layer is then formed aferromagnetic pinned layer (16), preferably a layer of Ni₈₀Fe₂₀, orCo₉₀Fe₁₀, formed to a thickness of between 0.5 nm and 5.0 nm. On theferromagnetic pinned layer is formed a first magnetic nano-oxide layer(17), a layer of material such as Fe₃O₄ or CrO₂, surface oxidations ofNiFe or CoFe, CoFeNi based spinel structures, ferrimagnetic garnets,manganites or other ferromagnetic perovskites, or ferromagnetic nitridesand are formed to a thickness of between 0.4 nm and 6.0 nm.

Referring next to FIG. 3 c, there is shown a continuation of the processof FIG. 3 b, wherein a metallic, second non-magnetic spacer layer (27),is formed on the first magnetic nano-oxide layer (17). The secondmetallic, non-magnetic spacer layer is formed of material such as Cu, Auor Ag and formed to a thickness of between 0.5 nm and 10 nm. A secondmagnetic nano-oxide layer (170) is formed on the spacer layer, saidnano-oxide layer being formed of material such as Fe₃O₄ or CrO₂, surfaceoxidations of NiFe or CoFe, CoFeNi based spinel structures,ferrimagnetic garnets, manganites or other ferromagnetic perovskites, orferromagnetic nitrides and being formed to a thickness of between 0.4 nmand 6.0 nm.

Referring finally to FIG. 3 d, there is shown the completion of theformation process wherein a ferromagnetic free layer (160) is formed onthe nano-oxide layer, said layer being preferably a layer of Ni₈₀Fe₂₀,or Co₉₀ Fe₁₀, formed to a thickness of between 0.5 nm and 5.0 nm.Finally, a metallic, non-magnetic layer (111) is formed on theferromagnetic free layer, said non-magnetic spacer layer being formed ofmaterial such as Cu, Au or Ag and formed to a thickness of between 0.5nm

Referring next to FIG. 4 a, there is shown a completed CPP stackstructured in a spin-valve configuration with a synthetic pinned (SyAP)layer and fabricated in accord with the present invention. The variouselements of the structure will be referred to in the context of thefollowing three figures, 4 b, 4 c and 4 d, describing the formation ofthe structure.

Referring next to FIG. 4 b, there is schematically shown the initialstage of the formation of the stack of FIG. 4 a. First a layer ofnon-magnetic metallic material (13) is formed of material such as Cu, Auor Ag to a thickness of between 0.5 nm and 10 nm. A layer ofantiferromagnetic material (35), which will serve to pin the syntheticantiferromagnetic pinned layer, is then formed on the non-magneticlayer. The layer of antiferromagnetic material is chosen from the groupconsisting of MnPt, NiMn, IrMn, CrMnPt and MnPtPd, and deposited to athickness of between 5 nm and 30 nm. A synthetic pinnedantiferromagnetic (SyAP) tri-layer (25) is then formed by stronglycoupling two ferromagnetic layers, (36) and (360) across a thinantiferromagnetic coupling layer (77). A material selected from thegroup of metallic, non-magnetic materials consisting of Ru, Rh, and Irand formed to a thickness of between approximately 0.5 and 1.5 nm can beused to form this antiferromagnetic coupling layer. Said ferromagneticlayers can be layers of ferromagnetic transition metal alloys,preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀, formed to a thickness of between 0.5nm and 5.0 nm. The synthetic antiferromagnetic pinned layer formation(25) described above is analogous to similar formations used in CPPspin-valve structures not fabricated in accord with the methods of thepresent invention. In all cases, the synthetic layer approach allows theformation of stronger pinning fields. In all-metal multilayer structuresnot fabricated in accord with the method of the present invention,however, the synthetic scheme would be detrimental to the CPP GMRamplitude. In the present case, however, the MO layers dominate thetotal stack resistance and the additional in-series resistance of thepinned layer will not adversely affect the GMR amplitude.

Referring next to FIG. 4 c, there is shown the fabrication of FIG. 4 bon which a first magnetic nano-oxide layer (370) has now been formed.The layer is formed of material chosen from the group that includesFe₃O₄ or CrO₂, surface oxidations of NiFe or CoFe, CoFeNi based spinelstructures, ferrimagnetic garnets, manganites or other ferromagneticperovskites, or ferromagnetic nitrides and it is formed to a thicknessof between 0.4 nm and 6.0 nm. On this nano-oxide layer is then formed asecond metallic, non-magnetic spacer layer (361), which can be a layerof Cu, Ag or Au formed to a thickness of between 0.5 and 10 nm.

Referring next to FIG. 4 d, there is shown the fabrication of FIG. 4 con which a second nano-oxide layer (377) has been formed. The layer isformed of material chosen from the group that includes Fe₃O₄ or CrO₂,surface oxidations of NiFe or CoFe, CoFeNi based spinel structures,ferrimagnetic garnets, manganites or other ferromagnetic perovskites, orferromagnetic nitrides and it is formed to a thickness of between 0.4 nmand 6.0 nm. On this nano-oxide layer is then formed a the freeferromagnetic layer (366). This ferromagnetic layers can be a layer offerromagnetic transition metal alloy, preferably Ni₈₀Fe₂₀, or Co₉₀Fe₁₀,formed to a thickness of between 0.5 nm and 5.0 nm. Finally, on theferromagnetic free layer there is formed a second metallic, non-magneticspacer layer (361), which can be a layer of Cu, Ag or Au formed to athickness of between 0.5 and 10 nm.

Referring finally to FIG. 5 a, there is shown a schematic representationof a CPP stack formed in accord with the method of the present inventionin which one of the magnetic nano-oxide layers (40) is not coupled toany other magnetic material. The two layers (17) and (171) are metallic,non-magnetic layers, such as Cu, Au or Ag. It should be noted that mostof the magnetic nano-oxide materials used in forming stacks in accordwith the present invention are not magnetically soft (low coercivity)materials. Some are even themselves used as recording media for someapplications. Therefore, their pinning energy may be large enough forthem to be used alone as pinned layers. The materials and dimensions ofthe layers will now be discussed in the context of the process offorming the stack.

Referring now to FIG. 5 b, there is shown a schematic cross-sectionaldiagram of the beginning steps in the formation of the stack of thisembodiment. First, a metallic, non-magnetic layer (17) is formed. Thiscan be a layer of Cu, Ag or Au formed to a thickness of between 0.5 and10 nm. Next, a layer of magnetic nano-oxide material (40) is formed onthe metallic layer. This layer is formed of material chosen from thegroup that includes Fe₃O₄ or CrO₂, surface oxidations of NiFe or CoFe,CoFeNi based spinel structures, ferrimagnetic garnets, manganites orother ferromagnetic perovskites, or ferromagnetic nitrides and it isformed to a thickness of between 0.4 nm and 6.0 nm. On this layer isthen formed a second metallic, non-magnetic layer (171). This can be alayer of Cu, Ag or Au formed to a thickness of between 0.5 and 10 nm. Onthis layer is then formed a second magnetic nano-oxide layer (41). Likethe first nano-oxide layer (40), this layer is formed of material chosenfrom the group that includes Fe₃O₄ or CrO₂, surface oxidations of NiFeor CoFe, CoFeNi based spinel structures, ferrimagnetic garnets,manganites or other ferromagnetic perovskites, or ferromagnetic nitridesand it is formed to a thickness of between 0.4 nm and 6.0 nm.

Referring finally to FIG. 5 c, there is shown the fabrication in FIG. 5b on which there has now been formed a ferromagnetic layer (50), whichcan be a layer of ferromagnetic transition metal alloy, preferablyNi₈₀Fe₂₀, or Co₉₀Fe₁₀, formed to a thickness of between 0.5 nm and 5.0nm. On this ferromagnetic layer there is then formed a final metallic,non-magnetic layer (170), which can be a layer of Cu, Ag or Au formed toa thickness of between 0.5 and 10 nm.

It is to be recognized that the structures described above in FIGS. 1 a,2 a, 3 a, 4 a, & 5 a represent unit cells. Stacks formed in accord withthe methods of the present invention may, therefore, compriserepetitions of these cells or combinations of these cells. In addition,the ferromagnetic layers within different cells need not be formed ofthe same materials nor formed to the same thicknesses.

Finally, it is also to be recognized that the structures formed by themethod of the present invention can be formed into read heads by theaddition of conducting leads and by the appropriate magnetizations offree and pinned ferromagnetic layers and by the formation of appropriatebias layers. They can also be formed as a part of a merged read/writehead by providing an inductive write head on which to form the read headprovided herein.

EXAMPLE AND DISCUSSION

An example of expected signal output can be given in terms of a samplesensor stack formed in accord with the embodiment described in FIG. 1 b.Let us consider a structure of the following specific composition anddimensions:

Cu 30A/Ni₈₀Fe₂₀ 30A/Fe₃O₄ 4A/Cu 30A/Fe₃O₄ 4A/Ni₈₀Fe₂₀ 30A/Cu 30A

(A=angstroms)

It has been shown that the resistivity of Fe₃O₄ is of the order of16,000 μΩ.cm for spin up (spin directed along the layer magnetic moment)electrons and on the order of 620,000 μΩ.cm for spin down electrons. Theratio between spin down and spin up resistivities can be even greater ifthe half-metallic character of Fe₃O₄ is maintained. For an area of theCPP MR element of 100 nm×100 nm, we can calculate a resistance of 12.5 Ωusing the two-current model and serial network of resistance well knownfor CPP transport in magnetic multilayers. The MR amplitude is expectedto be in the range of several hundred percent. This is the right orderof resistance that we seek for CPP MR heads. For an area of 50 nm×50 nm,the resistance would be 50 Ω. This resistance can be adjusted by varyingthe thickness of the magnetic nano-oxide layers.

For a given type of magnetic nano-oxide layer, the largest MR amplitudeis obtained when the thicknesses of the two layers is equal (as in theexample above). This can be seen as follows. Let the spin up resistance,R_(□)=αR for the first magnetic nano-oxide layer and let its spin downresistance be R_(□)=α⁻¹R. Let us also suppose, for simplicity, that thesecond layer is made of the same material and has a thickness which is afactor γ times that of the first layer. Considering that the resistanceof the stack is dominated by these two layers, the resistance in theparallel magnetic configuration is:R _(parallel)=(1+γ)(α+α⁻¹)Rand the resistance in the antiparallel configuration is:R _(antiparallel)=(α+α⁻¹γ)(αγ+α⁻¹)(α+α⁻¹)⁻¹(1+γ)⁻¹ R.Thus, the magnetoresistance normalized by the resistance in parallelalignment is given by:ΔR/R _(parallel)=(α²+α⁻²−2)(1+γ²)⁻¹γ.This quantity is maximum for γ=1, i.e. when the two layers have the samethickness. When this condition is satisfied, the maximum MR ratio isgiven by:ΔR/R _(parallel)=½(α²+α⁻²)−1.This is equal to zero if electron transport through the magneticnano-oxide layer is not spin dependent (α=1), but it can reach verylarge values if α is far from unity. If the layers are different inmaterial and have different spin up to spin down resistivity ratios,then the optimal relative thickness ratio would not be equal to unity,but could be calculated by the method above.

As is understood by a person skilled in the art, the preferredembodiments of the present invention are illustrative of the presentinvention rather than limiting of the present invention. Revisions andmodifications may be made to methods, materials, structures anddimensions employed in fabricating CPP sensor stacks having magneticnano-oxide layers, or magnetic read heads comprising such stacks, whilestill providing a method for fabricating CPP sensor stacks havingmagnetic nano-oxide layers, or magnetic read heads comprising suchstacks in accord with the spirit and scope of the present invention asdefined by the appended claims.

1. A magnetic nano-oxide based current-perpendicular-to-plane (CPP)magnetoresistive (MR) sensor stack having a spin valve configurationwith a synthetic antiferromagnetic (SyAP) pinned layer and havingincreased perpendicular resistance and enhanced magnetoresistiveproperties, comprising: a substrate; a first metallic, non-magneticspacer layer formed upon said substrate; a ferromagnetic free layerformed upon said first metallic non-magnetic spacer layer; a firstmagnetic nano-oxide formed upon said ferromagnetic free layer; a secondmetallic, non-magnetic spacer layer formed on said first magneticnano-oxide layer; a second magnetic nano-oxide layer formed upon saidsecond metallic, non-magnetic spacer layer; a syntheticantiferromagnetic pinned (SyAP) layer formed upon said second magneticnano-oxide layer; an antiferromagnetic layer formed upon said syntheticantiferromagnetic pinned (SyAP) layer and exchange biasing it; a thirdmetallic, non-magnetic spacer layer formed upon said antiferromagneticlayer.
 2. The structure of claim 1 wherein the first, second and thirdmetallic, non-magnetic spacer layers are formed of material selectedfrom the group consisting of the metallic, non-magnetic materials Cu, Auand Ag and wherein said layers are formed to a thickness of between 0.5nm and 10 nm.
 3. The structure of claim 1 wherein the ferromagnetic freelayer is a ferromagnetic transition metal alloy layer chosen from thegroup consisting of Ni₈₀Fe₂₀ and Co₉₀Fe₁₀ and are formed to a thicknessof between approximately 0.5 nm and 5.0 nm.
 4. The structure of claim 1wherein the first and second magnetic nano-oxide layers are separatelychosen from the group of materials consisting of Fe₃O₄, CrO₂, layersformed by surface oxidation of NiFe or CoFe, CoFeNi based spinelstructures, ferrimagnetic garnets, manganites or other ferromagneticperovskites and ferromagnetic nitrides and are formed of to a thicknessbetween approximately 0.4 nm and 6.0 nm.
 5. The structure of claim 4wherein the first and second magnetic nano-oxide layers are formed ofthe same material and same thickness for the maximum magnetoresistiveeffect.
 6. The structure of claim 1 wherein the syntheticantiferromagnetic pinned (SyAP) layer comprises: a first ferromagneticlayer; a thin metallic, non-magnetic antiferromagnetically couplinglayer formed upon said first ferromagnetic layer; a second ferromagneticlayer formed upon said coupling layer and antiferromagnetically coupledto said first ferromagnetic layer.
 7. The structure of claim 6 whereinthe first and second ferromagnetic layers are ferromagnetic transitionmetal alloy layers chosen from the group consisting of Ni₈₀Fe₂₀ andCo₉₀Fe₁₀ and are formed to a thickness of between approximately 0.5 nmand 5.0 nm.
 8. The structure of claim 6 wherein the thin metallicantiferromagnetically coupling layer is a layer of metallic materialchosen from the group consisting of Rh, Ru or Ir and is formed to athickness of between 0.5 nm and 1.5 nm.
 9. The structure of claim 6wherein the antiferromagnetic layer is a layer of antiferromagneticmaterial chosen from the group consisting of MnPt, NiMn, IrMn, CrMnPtand MnPtPd and is formed to a thickness of between 5 nm and 30 nm.
 10. Amethod of forming a magnetic nano-oxide basedcurrent-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stackhaving a spin valve configuration with a synthetic antiferromagneticpinned layer and having increased perpendicular resistance and enhancedmagnetoresistive properties, comprising: providing a substrate; formingupon said substrate a first metallic, non-magnetic spacer layer; formingon said first metallic non-magnetic spacer layer a ferromagnetic freelayer; forming upon said ferromagnetic free layer a first magneticnano-oxide layer; forming upon said first magnetic nano-oxide layer asecond metallic, non-magnetic spacer layer; forming upon said secondmetallic, non-magnetic spacer layer a second magnetic nano-oxide layer;forming upon said second magnetic nano-oxide layer a syntheticantiferromagnetic pinned (SyAP) layer, said formation further comprisingthe steps of: forming a first ferromagnetic layer, AP1; forming on saidfirst ferromagnetic layer, AP1, a metallic non-magnetic coupling layer;forming a second ferromagnetic layer, AP2, on said coupling layer;forming upon said synthetic antiferromagnetic pinned (SyAP) layer andexchange biasing it thereby, an antiferromagnetic layer; forming uponsaid antiferromagnetic layer a third metallic, non-magnetic spacerlayer.
 11. The method of claim 10 wherein the first, second and thirdmetallic, non-magnetic spacer layers are formed of material selectedfrom the group consisting of the metallic, non-magnetic materials Cu, Auand Ag and wherein said layers are formed to a thickness of between 0.5nm and 10 nm.
 12. The method of claim 10 wherein the ferromagnetic freelayer is a ferromagnetic transition metal alloy layer chosen from thegroup consisting of Ni₈₀Fe₂₀ and Co₉₀Fe₁₀ and are formed to a thicknessof between approximately 0.5 nm and 5.0 nm.
 13. The method of claim 10wherein the first and second magnetic nano-oxide layers are separatelychosen from the group of materials consisting of Fe₃O₄, CrO₂, layersformed by surface oxidation of NiFe or CoFe, CoFeNi based spinelstructures, ferrimagnetic garnets, manganites or other ferromagneticperovskites and ferromagnetic nitrides and are formed of to a thicknessbetween approximately 0.4 nm and 6.0 nm.
 14. The method of claim 13wherein the first and second magnetic nano-oxide layers are formed ofthe same material and same thickness for the maximum magnetoresistiveeffect.
 15. The method of claim 10 wherein the first and secondferromagnetic layers of the SyAP layer are ferromagnetic transitionmetal alloy layers chosen from the group consisting of Ni₈₀Fe₂₀ andCo₉₀Fe₁₀ and are formed to a thickness of between approximately 0.5 nmand 5.0 nm.
 16. The method of claim 10 wherein the thin metallicantiferromagnetically coupling layer is a layer of metallic materialchosen from the group consisting of Rh, Ru or Ir and is formed to athickness of between 0.5 nm and 1.5 nm.
 17. The method of claim 10wherein the antiferromagnetic layer is a layer of antiferromagneticmaterial chosen from the group consisting of MnPt, NiMn, IrMn, CrMnPtand MnPtPd and is formed to a thickness of between 5 nm and 30 nm.